发明授权
US07223680B1 Method of forming a dual damascene metal trace with reduced RF impedance resulting from the skin effect
失效
形成双镶嵌金属痕迹的方法，由皮肤效应引起的RF阻抗降低
- 专利标题： Method of forming a dual damascene metal trace with reduced RF impedance resulting from the skin effect
- 专利标题（中）： 形成双镶嵌金属痕迹的方法，由皮肤效应引起的RF阻抗降低
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申请号： US10727451申请日： 2003-12-03
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公开(公告)号： US07223680B1公开(公告)日： 2007-05-29
- 发明人: Peter J. Hopper , Peter Johnson , Kyuwoon Hwang , Michael Mian , Robert Drury
- 申请人： Peter J. Hopper , Peter Johnson , Kyuwoon Hwang , Michael Mian , Robert Drury
- 申请人地址： US CA Santa Clara
- 专利权人： National Semiconductor Corporation
- 当前专利权人： National Semiconductor Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Mark C. Pickering
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
The RF impedance of a metal trace at gigahertz frequencies is reduced by forming the metal trace to have a base region and a number of fingers that extend away from the base region. When formed to have a number of loops, the metal trace forms an inductor with an increased Q.
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