发明授权
- 专利标题: Substrate processing method
- 专利标题(中): 基板加工方法
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申请号: US10976040申请日: 2004-10-29
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公开(公告)号: US07223690B2公开(公告)日: 2007-05-29
- 发明人: Fumio Kondo , Koji Mishima , Akira Tanaka , Yoko Suzuki , Tetsuji Togawa , Hiroaki Inoue
- 申请人: Fumio Kondo , Koji Mishima , Akira Tanaka , Yoko Suzuki , Tetsuji Togawa , Hiroaki Inoue
- 申请人地址: JP Tokyo
- 专利权人: Ebara Corporation
- 当前专利权人: Ebara Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Wenderoth, Lind & Ponack, L.L.P.
- 优先权: JP2000-403889 20001204
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763 ; H01L21/44 ; H01L21/48 ; H01L21/50
摘要:
A substrate processing method comprising steps for forming a copper film on a surface of a substrate. These steps includes the step of filling a first metal in the trenches so as to form a plated film of the first metal on an entire surface of the substrate by electroplating, wherein the electromagnetic field is adjusted by the virtual anode so that differences of thickness of the plated film between the central portion and the peripheral portion of the substrate being minimized, and polishing and removing the plated film by pressing the substrate to the polishing surface, wherein the pressures pressing the substrate to the polishing surface at a central portion and a peripheral portion are adjusted.
公开/授权文献
- US20050064703A1 Substrate processing method 公开/授权日:2005-03-24
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