- 专利标题: Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former
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申请号: US11037084申请日: 2005-01-19
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公开(公告)号: US07223973B2公开(公告)日: 2007-05-29
- 发明人: Toshifumi Kimba , Tohru Satake , Tsutomu Karimata , Kenji Watanabe , Nobuharu Noji , Takeshi Murakami , Masahiro Hatakeyama , Mamoru Nakasuji , Hirosi Sobukawa , Shoji Yoshikawa , Shin Oowada , Mutsumi Saito
- 申请人: Toshifumi Kimba , Tohru Satake , Tsutomu Karimata , Kenji Watanabe , Nobuharu Noji , Takeshi Murakami , Masahiro Hatakeyama , Mamoru Nakasuji , Hirosi Sobukawa , Shoji Yoshikawa , Shin Oowada , Mutsumi Saito
- 申请人地址: JP Tokyo
- 专利权人: Ebara Corporation
- 当前专利权人: Ebara Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Westerman, Hattori, Daniels & Adrian, LLP
- 优先权: JP2000-367082 20001201; JP2000-371078 20001206; JP2001-2234 20010110; JP2001-31901 20010208; JP2001-31906 20010208; JP2001-33599 20010209; JP2001-37212 20010214; JP2001-73374 20010315; JP2001-89107 20010327; JP2001-114999 20010413; JP2001-124244 20010423; JP2001-158662 20010528; JP2001-184733 20010619
- 主分类号: G01N23/225
- IPC分类号: G01N23/225
摘要:
A substrate inspection apparatus 1-1 (FIG. 1) of the present invention performs the following steps of: carrying a substrate “S” to be inspected into an inspection chamber 23-1; maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; moving successively said substrate by means of a stage 26-1 with at least one degree of freedom; irradiating an electron beam having a specified width; helping said electron beam reach to a surface of said substrate via a primary electron optical system 10-1; trapping secondary electrons emitted from said substrate via a secondary electron optical system 20-1 and guiding it to a detecting system 35-1; forming a secondary electron image in an image processing system based on a detection signal of a secondary electron beam obtained by said detecting system; detecting a defective location in said substrate based on the secondary electron image formed by said image processing system; indicating and/or storing said defective location in said substrate by CPU 37-1; and taking said completely inspected substrate out of the inspection chamber. Thereby, the defect inspection on the substrate can be performed successively with high level of accuracy and efficiency as well as with higher throughput.
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