发明授权
- 专利标题： Semiconductor device and method of manufacture thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11064453申请日： 2005-02-24
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公开(公告)号： US07224019B2公开(公告)日： 2007-05-29
- 发明人: Katsuhiko Hieda , Daisuke Hagishima
- 申请人： Katsuhiko Hieda , Daisuke Hagishima
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2004-048170 20040224
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; G11C11/34
摘要：
A semiconductor device comprises a semiconductor substrate, an electrically rewritable semiconductor memory cell provided on the semiconductor substrate, the memory cell comprising an island semiconductor portion provided on the surface of the semiconductor substrate or above the semiconductor substrate, a first insulating film provided on a top surface of the island semiconductor portion, a second insulating film provided on a side surface of the island semiconductor portion and being smaller in thickness than the first insulating film, and a charge storage layer provided on the side surface of the island semiconductor portion with the second insulating film interposed therebetween and on a side surface of the first insulating film, a third insulating film provided on the charge storage layer, and a control gate electrode provided on the third insulating film.
公开/授权文献
- US20050226047A1 Semiconductor device and method of manufacture thereof 公开/授权日：2005-10-13
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