发明授权
- 专利标题： Programming of programmable resistive memory devices
- 专利标题（中）： 可编程电阻存储器件的编程
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申请号： US10933039申请日： 2004-09-02
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公开(公告)号： US07224598B2公开(公告)日： 2007-05-29
- 发明人: Frederick A. Perner
- 申请人： Frederick A. Perner
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
Programming of a programmable resistive memory device includes supplying programming power to the device; generating feedback as to when the device has been programmed; and removing the programming power when the feedback indicates that the device has been programmed.
公开/授权文献
- US20060044878A1 Programming of programmable resistive memory devices 公开/授权日：2006-03-02
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