Invention Grant
- Patent Title: Modification of mask blank to avoid charging effect
- Patent Title (中): 修改面罩空白以避免充电效果
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Application No.: US10441888Application Date: 2003-05-20
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Publication No.: US07226706B2Publication Date: 2007-06-05
- Inventor: Cheng-ming Lin
- Applicant: Cheng-ming Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: G03F1/00
- IPC: G03F1/00 ; G03C5/00

Abstract:
A blank mask for photomasking patterns on an integrated circuit comprises a non-conductive substrate and a layer of conductive material deposited on the substrate covering substantially the entire surface of said substrate. Methods for preventing charge accumulation on a non-conductive region of a mask, which is not covered by a layer of conductive material, are provided. One method comprises controlling electron beams to prevent the beams from striking an outer region for an area more than 90 percent of the outer region when patterning a predetermined feature on the mask. The outer region comprises an area beginning from an edge of the mask and ending at 2 to 6 mm inward from the edge. Another method comprises using a blocker to prevent electron beams from hitting the outer region for an area more than 90 percent of the outer region when patterning a predetermined feature on the substrate.
Public/Granted literature
- US20040234868A1 Novel modification of mask blank to avoid charging effect Public/Granted day:2004-11-25
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