发明授权
- 专利标题： Methods and apparatus for forming rhodium-containing layers
- 专利标题（中）： 形成含铑层的方法和装置
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申请号： US10755097申请日： 2004-01-09
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公开(公告)号： US07226861B2公开(公告)日： 2007-06-05
- 发明人: Stefan Uhlenbrock , Eugene P. Marsh
- 申请人： Stefan Uhlenbrock , Eugene P. Marsh
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Mueting, Raasch & Gebhardt, P.A.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The alloy barriers protect surrounding materials from oxidation during oxidative recrystallization steps and protect cell dielectrics from loss of oxygen during high temperature processing steps. Also provided are methods for CVD co-deposition of platinum-rhodium alloy diffusion barriers.
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