Invention Grant
US07227220B2 Semiconductor devices having buried bit lines and methods of manufacturing semiconductor devices having buried bit lines
失效
具有掩埋位线的半导体器件和具有掩埋位线的半导体器件的制造方法
- Patent Title: Semiconductor devices having buried bit lines and methods of manufacturing semiconductor devices having buried bit lines
- Patent Title (中): 具有掩埋位线的半导体器件和具有掩埋位线的半导体器件的制造方法
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Application No.: US11240544Application Date: 2005-09-30
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Publication No.: US07227220B2Publication Date: 2007-06-05
- Inventor: Tae-yong Kim , Choong-ho Lee , Chul Lee , Eun-suk Cho , Suk-kang Sung , Hye-jin Cho
- Applicant: Tae-yong Kim , Choong-ho Lee , Chul Lee , Eun-suk Cho , Suk-kang Sung , Hye-jin Cho
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers, Bigel, Sibley & Sajovec, P.A.
- Priority: KR10-2004-0107993 20041217
- Main IPC: H01L29/792
- IPC: H01L29/792

Abstract:
A semiconductor device includes a semiconductor substrate having a first conductivity type and having an upper portion, a pair of bit lines extending in a first direction and doped with an impurity of a second conductivity type opposite to the first conductivity type and spaced from one another in the upper portion of the semiconductor substrate, a first line formed between the pair of bit lines having a plurality of alternating recessed device isolation regions and channel regions, with each of the channel regions contacting each bit line of the at least one pair of bit lines, and word lines formed at right angles to the first lines and covering the channel regions.
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