发明授权
- 专利标题: Method for erasing an NROM cell
- 专利标题(中): 擦除NROM单元的方法
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申请号: US11415446申请日: 2006-05-01
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公开(公告)号: US07227787B2公开(公告)日: 2007-06-05
- 发明人: Andrei Mihnea , Chun Chen
- 申请人: Andrei Mihnea , Chun Chen
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Leffert, Jay & Polglaze P.A.
- 主分类号: G11C11/34
- IPC分类号: G11C11/34 ; G11C16/04
摘要:
An operation to erase a nitride read only memory (NROM) memory block starts by erasing the memory block. An erase verify operation can then be performed to determine the success of the erase. If a read operation is performed and column current is detected, a high-efficiency recovery operation is performed. If the read operation is performed and column current is not detected, the erase operation has been successfully completed.
公开/授权文献
- US20060215461A1 Method for erasing an NROM cell 公开/授权日:2006-09-28
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