发明授权
- 专利标题： Trench-gated MOSFET including schottky diode therein
- 专利标题（中）： 沟槽栅MOSFET，其中包括肖特基二极管
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申请号： US11127224申请日： 2005-05-12
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公开(公告)号： US07230297B2公开(公告)日： 2007-06-12
- 发明人: Syotaro Ono , Akio Nakagawa , Yusuke Kawaguchi , Yoshihiro Yamaguchi
- 申请人： Syotaro Ono , Akio Nakagawa , Yusuke Kawaguchi , Yoshihiro Yamaguchi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JPP2004-145265 20040514; JPP2005-112645 20050408
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
Disclosed is a trench MOSFET, including: a trench gate structure having a gate electrode and a gate insulating film; an n-type diffusion layer formed to face the gate electrode via the gate insulating film at an upper portion of the trench; a p-type base layer formed to face the gate electrode via the gate insulating film at a lower portion than the upper portion; an n-type epitaxial layer locating to face the gate electrode via the gate insulating film at a further lower portion than the lower portion; a metal layer formed departing from the trench in parallel with a depth direction of the trench, penetrating the n-type diffusion layer and the p-type base layer, to reach the n-type epitaxial layer; and a p-type layer with higher impurity concentration than the p-type base layer, locating to be in contact with the p-type base layer and the metal layer.
公开/授权文献
- US20050258479A1 Trench MOSFET 公开/授权日：2005-11-24
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