发明授权
- 专利标题： Semiconductor devices including an external power voltage control function and methods of operating the same
- 专利标题（中）： 包括外部电源电压控制功能的半导体器件及其操作方法
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申请号： US11005523申请日： 2004-12-06
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公开(公告)号： US07230475B2公开(公告)日： 2007-06-12
- 发明人: Jong-Hyun Choi , Mi-Jo Kim , Kwang-Sook Noh , Beob-Rae Cho
- 申请人： Jong-Hyun Choi , Mi-Jo Kim , Kwang-Sook Noh , Beob-Rae Cho
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Myers Bigel Sibley & Sajovec, PA
- 优先权： KR10-2003-0087877 20031205
- 主分类号： G05F1/10
- IPC分类号： G05F1/10
摘要：
A semiconductor device includes a memory and a power voltage interrupter configured to interrupt an external power voltage applied to circuitry of the semiconductor device responsive to a Deep Power Down (DPD) command signal generated in a DPD mode of the memory. A power voltage shifter is configured to shift a power voltage in the circuitry to a specific level responsive to the DPD command signal.