发明授权
- 专利标题： Semiconductor device having a cylindrical capacitor and method for manufacturing the same using a two-layer structure and etching to prevent blockage
- 专利标题（中）： 具有圆柱形电容器的半导体器件及其制造方法使用两层结构和蚀刻以防止堵塞
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申请号： US11289336申请日： 2005-11-30
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公开(公告)号： US07232735B2公开(公告)日： 2007-06-19
- 发明人: Masahiko Ohuchi
- 申请人： Masahiko Ohuchi
- 申请人地址： JP Tokyo
- 专利权人： Elpida Memory Inc.
- 当前专利权人： Elpida Memory Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2004-346191 20041130
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A semiconductor device according to the present invention includes a cylindrical capacitor. An amorphous silicon layer serving as a lower electrode of the cylindrical capacitor has a two-layer structure including a lower high-concentration impurity sublayer and an upper low-concentration impurity sublayer. The blockage of a cylinder is prevented by etching the upper low-concentration impurity sublayer in a lower region of the cylinder and thereby reducing the crystal grain size of hemispherical silicon grains formed in the lower region.
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