Invention Grant
- Patent Title: Gallium nitride material devices and methods of forming the same
- Patent Title (中): 氮化镓材料器件及其形成方法
-
Application No.: US10650122Application Date: 2003-08-25
-
Publication No.: US07233028B2Publication Date: 2007-06-19
- Inventor: T. Warren Weeks , Kevin J. Linthicum
- Applicant: T. Warren Weeks , Kevin J. Linthicum
- Applicant Address: US NC Raleigh
- Assignee: Nitronex Corporation
- Current Assignee: Nitronex Corporation
- Current Assignee Address: US NC Raleigh
- Agency: Wolf, Greenfield & Sacks, P.C.
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
The invention provides gallium nitride material devices, structures and methods of forming the same. The devices include a gallium nitride material formed over a substrate, such as silicon. Exemplary devices include light emitting devices (e.g., LED's, lasers), light detecting devices (such as detectors and sensors), power rectifier diodes and FETs (e.g., HFETs), amongst others.
Public/Granted literature
- US20040130002A1 Gallium nitride material devices and methods of forming the same Public/Granted day:2004-07-08
Information query
IPC分类:
