发明授权
- 专利标题： Low temperature etchant for treatment of silicon-containing surfaces
- 专利标题（中）： 用于处理含硅表面的低温蚀刻剂
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申请号： US11047323申请日： 2005-01-31
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公开(公告)号： US07235492B2公开(公告)日： 2007-06-26
- 发明人: Arkadii V. Samoilov
- 申请人： Arkadii V. Samoilov
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan, LLP
- 主分类号： H01L21/461
- IPC分类号： H01L21/461 ; H01L21/302
摘要：
In one embodiment of the invention, a method for finishing or treating a silicon-containing surface is provided which includes removing contaminants and/or smoothing the surface contained on the surface by a slow etch process (e.g., about 100 Å/min) is provided which includes removing silicon-containing material to form a recess in a source/drain (S/D) area on the substrate. The silicon-containing surface is exposed to an etching gas that contains an etchant, preferably chlorine, a carrier gas and an optional silicon source.
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