发明授权
- 专利标题： Material for forming silica based film
- 专利标题（中）： 用于形成二氧化硅基膜的材料
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申请号： US11000735申请日： 2004-12-01
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公开(公告)号： US07235500B2公开(公告)日： 2007-06-26
- 发明人: Yasushi Fujii , Tatsuhiko Shibuya , Isao Sato
- 申请人： Yasushi Fujii , Tatsuhiko Shibuya , Isao Sato
- 申请人地址： JP
- 专利权人： Tokyo Ohka Kogyo Co., Ltd.
- 当前专利权人： Tokyo Ohka Kogyo Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Knobbe, Martens, Olson and Bear, LLP
- 优先权： JP2003-412380 20031210
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
A material for forming a silica based film which enables the production of a silica based film with a reduced etching rate relative to hydrofluoric acid. This material includes a solid fraction containing a film forming component capable of generating a silica based film, an organic solvent, and water, and the water content of the material, as determined by gas chromatography measurement, is within a range from 0.1 to 50% by weight.
公开/授权文献
- US20050136692A1 Material for forming silica based film 公开/授权日：2005-06-23
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