发明授权
- 专利标题: Edge intensive antifuse and method for making the same
- 专利标题(中): 边缘强化反熔丝及其制作方法
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申请号: US10882987申请日: 2004-06-30
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公开(公告)号: US07235858B2公开(公告)日: 2007-06-26
- 发明人: Jigish D. Trivedi
- 申请人: Jigish D. Trivedi
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Dorsey & Whitney LLP
- 主分类号: H01L29/00
- IPC分类号: H01L29/00
摘要:
An antifuse including a bottom plate having a plurality of longitudinal members arranged substantially parallel to a first axis, a dielectric layer formed on the bottom plate, and a top plate having a plurality of longitudinal members arranged substantially parallel to a second axis, the top plate formed over the dielectric layer. Multiple edges formed at the interfaces between the top and bottom plates result in regions of localized charge concentration when a programming voltage is applied across the antifuse. As a result, the formation of the antifuse dielectric over the corners of the bottom plates enhance the electric field during programming of the antifuse. Reduced programming voltages can be used in programming the antifuse and the resulting conductive path between the top and bottom plates will likely form along the multiple edges.
公开/授权文献
- US20040238917A1 Edge intensive antifuse and method for making the same 公开/授权日:2004-12-02
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