A method of making an image sensor, the method includes the steps of providing a plurality of pixels each with a photodetector; providing an amplifier that is shared between the plurality of photodetectors; providing a transfer gate associated with each photodetector; providing a charge-to-voltage conversion region that is shared between the plurality of photodetectors; determining a capacitance between each transfer gate and the charge-to-voltage conversion region; and modifying the capacitance to be substantially the same by altering a physical structure within one or more pixels.