Invention Grant
US07239216B2 Semiconductor memory device with data bus scheme for reducing high frequency noise
有权
具有数据总线方案的半导体存储器件,用于降低高频噪声
- Patent Title: Semiconductor memory device with data bus scheme for reducing high frequency noise
- Patent Title (中): 具有数据总线方案的半导体存储器件,用于降低高频噪声
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Application No.: US10424923Application Date: 2003-04-29
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Publication No.: US07239216B2Publication Date: 2007-07-03
- Inventor: Myun-Joo Park , Jae-Jun Lee
- Applicant: Myun-Joo Park , Jae-Jun Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2002-0031410 20020604
- Main IPC: H01P5/12
- IPC: H01P5/12

Abstract:
A semiconductor memory device includes memory modules which have memories and a data bus which transfers data to the memory modules, in which the data bus comprises a low frequency band data pass unit which removes the high frequency component of the data and sends the data to the memory modules. The low frequency band data pass unit comprises a plurality of stubs which are connected to the data bus in parallel and are formed as printed circuit board (PCB) patterns. The low frequency band data pass unit comprises a plurality of plates that are connected to the data bus in parallel and are formed as PCB patterns. The low frequency band data pass unit has a shape in which parts having a wide width and parts having a narrow width are alternately connected. Therefore, without adding a separate passive device, the semiconductor memory device reduces the high frequency noise of data transferred through a data bus such that the voltage margin of the data improves, the cost for passive devices such as capacitors, is reduced, and the process for attaching the passive devices is simplified.
Public/Granted literature
- US20030223290A1 Semiconductor memory device with data bus scheme for reducing high frequency noise Public/Granted day:2003-12-04
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