发明授权
- 专利标题： Fabrication of an OTP-EPROM having reduced leakage current
- 专利标题（中）： 具有减小漏电流的OTP-EPROM的制造
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申请号： US10442524申请日： 2003-05-21
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公开(公告)号： US07244651B2公开(公告)日： 2007-07-17
- 发明人: Xiaoju Wu , Jozef Mitros , Pinghai Hao
- 申请人： Xiaoju Wu , Jozef Mitros , Pinghai Hao
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Rose Alyssa Keagy; W. James Brady; Frederick J. Telecky, Jr.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
The leakage current of an OTP-EPROM cell formed using buried channel PMOS technology can be reduced. The reduction in leakage current of the OTP-EPROM can be achieved by blocking implantation of the Vtp implant into a channel region of an n-well that substantially underlies a floating gate structure. The Vtp implant can be blocked by providing a mask overlying the surface of the channel region of the n-well during implantation of the Vtp implant.
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