Invention Grant
- Patent Title: Electron emission device
- Patent Title (中): 电子发射装置
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Application No.: US11130103Application Date: 2005-05-17
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Publication No.: US07245067B2Publication Date: 2007-07-17
- Inventor: Sang-Jo Lee , Chun-Gyoo Lee , Byong-Gon Lee
- Applicant: Sang-Jo Lee , Chun-Gyoo Lee , Byong-Gon Lee
- Applicant Address: KR Suwon
- Assignee: Samsung SDI Co., Ltd.
- Current Assignee: Samsung SDI Co., Ltd.
- Current Assignee Address: KR Suwon
- Agency: H. C. Park & Associates, PLC
- Priority: KR10-2004-0035127 20040518
- Main IPC: H01J9/02
- IPC: H01J9/02

Abstract:
An electron emission device can include gate electrodes formed on a substrate and cathode electrodes insulated from the gate electrodes with an insulating layer interposed between them. Each cathode electrode can have a receptor at a peripheral side. Electron emission regions may be formed within the receptors and in contact with the cathode electrodes. Counter electrodes can face the cathode electrodes, can be coplanar with the cathode electrodes, and can be coupled to the gate electrodes. The shortest distance between the electron emission region and the counter electrode may be smaller than the shortest distance between the cathode electrode and the counter electrode.
Public/Granted literature
- US20050258730A1 Electron emission device Public/Granted day:2005-11-24
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