Invention Grant
US07245370B2 Nanowires for surface-enhanced Raman scattering molecular sensors
有权
纳米线用于表面增强拉曼散射分子传感器
- Patent Title: Nanowires for surface-enhanced Raman scattering molecular sensors
- Patent Title (中): 纳米线用于表面增强拉曼散射分子传感器
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Application No.: US11030733Application Date: 2005-01-06
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Publication No.: US07245370B2Publication Date: 2007-07-17
- Inventor: Alexandre Bratkovski , M. Salf Islam , Theodore I. Kamins , Zhiyong Li , Shih-Yuan Wang
- Applicant: Alexandre Bratkovski , M. Salf Islam , Theodore I. Kamins , Zhiyong Li , Shih-Yuan Wang
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: G01J3/44
- IPC: G01J3/44 ; G01N21/65
Abstract:
A SERS-active structure is disclosed that includes a substrate and at least two nanowires disposed on the substrate. Each of the at least two nanowires has a first end and a second end, the first end being attached to the substrate and the second end having a SERS-active tip. A SERS system is also disclosed that includes a SERS-active structure. Also disclosed are methods for forming a SERS-active structure and methods for performing SERS with SERS-active structures.
Public/Granted literature
- US20060146323A1 Nanowires for surface-enhanced raman scattering molecular sensors Public/Granted day:2006-07-06
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