发明授权
- 专利标题： Magnetic memory having a ferromagnetic tunneling junction
- 专利标题（中）： 具有铁磁隧道结的磁存储器
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申请号： US11069991申请日： 2005-03-03
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公开(公告)号： US07245464B2公开(公告)日： 2007-07-17
- 发明人: Tatsuya Kishi , Yoshiaki Saito , Minoru Amano , Shigeki Takahashi , Katsuya Nishiyama
- 申请人： Tatsuya Kishi , Yoshiaki Saito , Minoru Amano , Shigeki Takahashi , Katsuya Nishiyama
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2001-298849 20010928
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
A magnetoresistive effect element of a tunnel junction type includes a magnetic multi-layered film (1), ferromagnetic film (3) and intervening insulating film (2) such that a current flows between the magnetic multi-layered film and the ferromagnetic film, tunneling through the insulating film. The magnetic multi-layered film includes a first ferromagnetic layer, second ferromagnetic layer and anti-ferromagnetic layer inserted between the first and second ferromagnetic layers.
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