发明授权
- 专利标题： Vertical integration of a MEMS structure with electronics in a hermetically sealed cavity
- 专利标题（中）： 将MEMS结构与电子密封腔垂直集成在一起
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申请号： US10771135申请日： 2004-02-02
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公开(公告)号： US07247246B2公开(公告)日： 2007-07-24
- 发明人: Steven S. Nasiri , Anthony Francis Flannery, Jr.
- 申请人： Steven S. Nasiri , Anthony Francis Flannery, Jr.
- 申请人地址： US CA San Jose
- 专利权人： Atmel Corporation
- 当前专利权人： Atmel Corporation
- 当前专利权人地址： US CA San Jose
- 代理机构： Sawyer Law Group LLP
- 主分类号： C23F1/00
- IPC分类号： C23F1/00
摘要：
A wafer-scale fabrication method for providing MEMS assemblies having a MEMS subassembly sandwiched between and bonded to a cap and a base is provided. The MEMS subassembly includes at least one MEMS device element flexibly connected to the MEMS assembly. The vertical separation between the MEMS device element and an electrode on the base is lithographically defined. Precise control of this critical vertical gap dimension is thereby provided. Fabrication cost is greatly reduced by wafer scale integration.
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