发明授权
- 专利标题: Highly oriented perpendicular magnetic recording media
- 专利标题(中): 高取向垂直磁记录介质
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申请号: US10764602申请日: 2004-01-27
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公开(公告)号: US07247396B2公开(公告)日: 2007-07-24
- 发明人: Thomas Patrick Nolan , Erol Girt , Chunghee Chang , Qixu Chen , Li-Lien Lee
- 申请人: Thomas Patrick Nolan , Erol Girt , Chunghee Chang , Qixu Chen , Li-Lien Lee
- 申请人地址: US CA Scotts Valley
- 专利权人: Seagate Technology LLC
- 当前专利权人: Seagate Technology LLC
- 当前专利权人地址: US CA Scotts Valley
- 代理机构: McDermott Will & Emery LLP
- 主分类号: G11B5/738
- IPC分类号: G11B5/738
摘要:
A perpendicular magnetic recording medium including an interlayer structure for crystallographically orienting a layer of a hexagonal close-packed (hcp) perpendicular magnetic recording material formed thereon, comprising in overlying sequence from a surface of a magnetically soft underlayer: (1) a first crystalline layer of a material having a first lattice parameter and a strong preferred growth orientation; (2) a second crystalline layer of a material having a second lattice parameter and the same strong preferred growth orientation as the first crystalline layer; and (3) a third crystalline layer of an hcp material, having a [0002] lattice parameter similar to or different from that of the second lattice parameter of the second crystalline layer and a strong preferred growth orientation, wherein: the second crystalline layer has a lower interfacial energy with the first crystalline layer and a higher interfacial energy with the third crystalline layer, owing to a lower surface energy of the first crystalline layer and a higher surface energy of the second crystalline layer.
公开/授权文献
- US20040258962A1 Highly oriented perpendicular magnetic recording media 公开/授权日:2004-12-23
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