发明授权
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10970026申请日： 2004-10-22
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公开(公告)号： US07247891B2公开(公告)日： 2007-07-24
- 发明人: Atsuhiko Kanda , Tsuyoshi Tanaka , Yasuhiro Uemoto , Yutaka Hirose , Tomohiro Murata
- 申请人： Atsuhiko Kanda , Tsuyoshi Tanaka , Yasuhiro Uemoto , Yutaka Hirose , Tomohiro Murata
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2003-363121 20031023
- 主分类号： H01L29/739
- IPC分类号： H01L29/739
摘要：
A semiconductor device has a first nitride semiconductor layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and having such a composition as to generate a 2-dimensional electron gas layer in the upper portion of the first nitride semiconductor layer, and an electrode having an ohmic property and formed selectively on the second nitride semiconductor layer. The second nitride semiconductor layer includes a contact area having at least one inclined portion with a bottom or wall surface thereof being inclined toward the upper surface of the first nitride semiconductor layer and defining a depressed cross-sectional configuration. The electrode is formed on the contact area.
公开/授权文献
- US20050087763A1 Semiconductor device and method for fabricating the same 公开/授权日：2005-04-28
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