发明授权
US07250372B2 Method for BARC over-etch time adjust with real-time process feedback
有权
BARC过蚀刻时间的方法用实时过程反馈调整
- 专利标题: Method for BARC over-etch time adjust with real-time process feedback
- 专利标题(中): BARC过蚀刻时间的方法用实时过程反馈调整
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申请号: US11177145申请日: 2005-07-07
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公开(公告)号: US07250372B2公开(公告)日: 2007-07-31
- 发明人: James B. Friedmann , Christopher C. Baum
- 申请人: James B. Friedmann , Christopher C. Baum
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: US TX Dallas
- 代理商 Peter K. McLarty; W. James Brady, III; Frederick J. Telecky, Jr.
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
A method for determining the anti-reflective coating (or bottom anti-reflective coating) over-etch time adjust with real-time process feedback is presented. The critical dimension CDresist of the patterned photoresist is measured and a first wafer with median values chosen (101) from a lot. A first time t* is found (102) and used to form the desired structure. Using the measured critical dimension of the formed structure on the first wafer a second time tlot is found (104). Finally, an over-etch time t(x) is found and used to etch the remaining wafers in the lot (106).