发明授权
- 专利标题: Structure and fabrication method of electrostatic discharge protection circuit
- 专利标题(中): 静电放电保护电路的结构与制造方法
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申请号: US10951373申请日: 2004-09-28
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公开(公告)号: US07253480B2公开(公告)日: 2007-08-07
- 发明人: Shiao-Shien Chen , Tsun-Lai Hsu , Tien-Hao Tang , Hua-Chou Tseng
- 申请人: Shiao-Shien Chen , Tsun-Lai Hsu , Tien-Hao Tang , Hua-Chou Tseng
- 申请人地址: TW Hsinchu
- 专利权人: United Microelectronics Corp.
- 当前专利权人: United Microelectronics Corp.
- 当前专利权人地址: TW Hsinchu
- 代理机构: J.C. Patents
- 优先权: TW91108181A 20020422
- 主分类号: H01L23/62
- IPC分类号: H01L23/62
摘要:
A structure of an electrostatic discharge protection circuit, in which a buried layer is formed in the substrate of the electrostatic discharge protection circuit, and a sinker layer electrically connected to the buried layer and a drain is also formed therein. Thereby, when the electrostatic discharge protection circuit is activated, the current flows from a source through the buried layer and the sinker layer to the drain. The current flow path is remote from the gate dielectric layer to avoid damaging the gate dielectric by a large current, so as to improve the dielectric strength of the electrostatic discharge protection circuit.
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