发明授权
- 专利标题： Process for oxide cap formation in semiconductor manufacturing
- 专利标题（中）： 半导体制造中氧化层形成的工艺
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申请号： US10905881申请日： 2005-01-25
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公开(公告)号： US07256114B2公开(公告)日： 2007-08-14
- 发明人: Steven J. Holmes , Toshiharu Furukawa , Mark C. Hakey , David V. Horak , Charles W. Koburger, III , Larry A. Nesbit
- 申请人： Steven J. Holmes , Toshiharu Furukawa , Mark C. Hakey , David V. Horak , Charles W. Koburger, III , Larry A. Nesbit
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Yuanmin Cai
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A process for forming a semiconductor device having an oxide beanie structure (an oxide cap overhanging an underlying portion of the device). An oxide layer is first provided covering that portion, with the layer having a top surface and a side surface. The top and side surfaces are then exposed to an oxide deposition bath, thereby causing deposition of oxide on those surfaces. Deposition of oxide on the top surface causes growth of the cap layer in a vertical direction and deposition of oxide on the side surface causes growth of the cap layer in a horizontal direction, thereby forming the beanie structure.