发明授权
- 专利标题： Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device
- 专利标题（中）： 多位非易失性存储器件，其操作方法以及制造多位非易失性存储器件的方法
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申请号： US11181724申请日： 2005-07-15
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公开(公告)号： US07256447B2公开(公告)日： 2007-08-14
- 发明人: Yoon-dong Park , Sun-ae Seo , Choong-rae Cho , Won-joo Kim , Sang-min Shin
- 申请人： Yoon-dong Park , Sun-ae Seo , Choong-rae Cho , Won-joo Kim , Sang-min Shin
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Buchanan Ingersoll & Rooney PC
- 优先权： KR10-2004-0091491 20041110
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
Disclosed are a muli-bit non-volatile memory device, a method of operating the same, and a method of manufacturing the multi-bit non-volatile memory device. A unit cell of the muli-bit non-volatile memory device may be formed on a semiconductor substrate may include: a plurality of channels disposed perpendicularly to the upper surface of the semiconductor substrate; a plurality of storage nodes disposed on opposite sides of the channels perpendicularly the upper surface of the semiconductor substrate; a control gate surrounding upper portions of the channels and the storage nodes, and side surfaces of the storage nodes; and an insulating film formed between the channels and the storage nodes, between the channels and the control gate, and between the storage nodes and the control gate.
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