发明授权
US07258931B2 Semiconductor wafers having asymmetric edge profiles that facilitate high yield processing by inhibiting particulate contamination
有权
具有不对称边缘轮廓的半导体晶片,其通过抑制颗粒污染而促进高产量处理
- 专利标题: Semiconductor wafers having asymmetric edge profiles that facilitate high yield processing by inhibiting particulate contamination
- 专利标题(中): 具有不对称边缘轮廓的半导体晶片,其通过抑制颗粒污染而促进高产量处理
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申请号: US10601475申请日: 2003-06-23
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公开(公告)号: US07258931B2公开(公告)日: 2007-08-21
- 发明人: Gi-Jung Kim , Woo-Serk Kim , Sang-Mun Chon , Tae-Yeol Heo
- 申请人: Gi-Jung Kim , Woo-Serk Kim , Sang-Mun Chon , Tae-Yeol Heo
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec PA
- 主分类号: B32B9/00
- IPC分类号: B32B9/00 ; H01L29/06
摘要:
Semiconductor wafers utilize asymmetric edge profiles (EP) to facilitate higher yield semiconductor device processing. These edge profiles are configured to reduce the volume of thin film residues that may form on a top surface of a semiconductor wafer at locations adjacent a peripheral edge thereof. These edges profiles are also configured to inhibit redeposition of residue particulates on the top surfaces of the wafers during semiconductor processing steps. Such steps may include surface cleaning and rinsing steps that may include passing a cleaning or rinsing solution across a wafer or batch of wafers that are held by a cartridge and submerged in the solution.