发明授权
- 专利标题: On-axis electron impact ion source
- 专利标题(中): 轴上电子冲击离子源
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申请号: US11271443申请日: 2005-11-09
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公开(公告)号: US07259379B2公开(公告)日: 2007-08-21
- 发明人: Mingda Wang , Edward C. Cirimele
- 申请人: Mingda Wang , Edward C. Cirimele
- 申请人地址: US CA Santa Clara
- 专利权人: Agilent Technologies, Inc.
- 当前专利权人: Agilent Technologies, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: B01D59/44
- IPC分类号: B01D59/44 ; H01J27/00 ; H01J49/26
摘要:
An electron impact ion source includes an ionization chamber in which a first rf multipole field can be generated and an ion guide positioned downstream from the ionization chamber in which a second rf multipole field can be generated wherein electrons are injected into the ionization chamber along the axis (on-axis) to ionize an analyte sample provided to the ionization chamber.
公开/授权文献
- US20060145072A1 On-axis electron impact ion source 公开/授权日:2006-07-06