发明授权
- 专利标题： Semiconductor laser device and method of fabricating the same
- 专利标题（中）： 半导体激光器件及其制造方法
-
申请号： US10811137申请日： 2004-03-29
-
公开(公告)号： US07260130B2公开(公告)日： 2007-08-21
- 发明人: Kunio Takeuchi , Ryoji Hiroyama , Daijiro Inoue , Shigeyuki Okamoto , Noriaki Matsuoka , Shingo Kameyama , Kiyoshi Oota
- 申请人： Kunio Takeuchi , Ryoji Hiroyama , Daijiro Inoue , Shigeyuki Okamoto , Noriaki Matsuoka , Shingo Kameyama , Kiyoshi Oota
- 申请人地址： JP Osaka
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2003-093976 20030331; JP2003-337877 20030929
- 主分类号： H01S5/00
- IPC分类号： H01S5/00
摘要：
A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.
公开/授权文献
信息查询
