Invention Grant
US07262093B2 Structure of a non-volatile memory cell and method of forming the same
失效
非易失性存储单元的结构及其形成方法
- Patent Title: Structure of a non-volatile memory cell and method of forming the same
- Patent Title (中): 非易失性存储单元的结构及其形成方法
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Application No.: US10891076Application Date: 2004-07-15
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Publication No.: US07262093B2Publication Date: 2007-08-28
- Inventor: Tings Wang
- Applicant: Tings Wang
- Applicant Address: TW
- Assignee: ProMOS Technologies, Inc.
- Current Assignee: ProMOS Technologies, Inc.
- Current Assignee Address: TW
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/788
Abstract:
A flash memory cell is provided. The flash memory cell includes a substrate having a source and a drain formed therein, a bit line contact formed above the drain, a control gate formed above the substrate, a spacer floating gate formed above the substrate and adjacent to the control gate, and a first spacer formed between the bit line contact and the control gate, wherein the first spacer is in contact with both the bit line contact and the control gate.
Public/Granted literature
- US20060011966A1 Structure of a non-volatile memory cell and method of forming the same Public/Granted day:2006-01-19
Information query
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