Invention Grant
- Patent Title: Structure for phase change memory and the method of forming same
- Patent Title (中): 相变存储器的结构及其形成方法
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Application No.: US10966335Application Date: 2004-10-15
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Publication No.: US07262427B2Publication Date: 2007-08-28
- Inventor: Ming Hsiu Lee , Yi Chou Chen
- Applicant: Ming Hsiu Lee , Yi Chou Chen
- Applicant Address: TW
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW
- Agency: Martine Penilla & Gencarella, LLP
- Main IPC: H01L29/04
- IPC: H01L29/04

Abstract:
A phase change device includes a first contact electrode structure a phase change material and a first insulating material between the phase change material and the first contact electrode structure and a second contact electrode in contact with the phase change material. A contact structure formed in the first insulating material between the first contact electrode structure and the phase change material is also included. The contact structure is formed by an insulating material breakdown process. A method of forming a phase change device is also described.
Public/Granted literature
- US20050173691A1 Structure for phase change memory and the method of forming same Public/Granted day:2005-08-11
Information query
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