发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US11137660申请日： 2005-05-26
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公开(公告)号： US07262433B2公开(公告)日： 2007-08-28
- 发明人: Kazuyuki Sugahara , Naoki Nakagawa , Yoshihiko Toyoda , Takao Sakamoto
- 申请人： Kazuyuki Sugahara , Naoki Nakagawa , Yoshihiko Toyoda , Takao Sakamoto
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2004-159597 20040528
- 主分类号： H01L27/12
- IPC分类号： H01L27/12
摘要：
A first thin film transistor including a gate electrode, a source region, a drain region, a GOLD region, and a channel region is formed at a first region at a TFT array substrate. A second thin film transistor including a gate electrode, a source region, drain region, a GOLD region, and a channel region is formed at a second region. The GOLD length (0.5 μm) of the GOLD region of the second thin film transistor is set shorter than the GOLD length (1.5 μm) of the GOLD region of the first thin film transistor. Accordingly, a semiconductor device directed to reducing the area occupied by semiconductor elements is obtained.
公开/授权文献
- US20050263770A1 Semiconductor device 公开/授权日：2005-12-01
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