Invention Grant
US07262447B2 Metal oxide silicon transistor and semiconductor apparatus having high λ and β performances
失效
具有高λ和β性能的金属氧化物硅晶体管和半导体器件
- Patent Title: Metal oxide silicon transistor and semiconductor apparatus having high λ and β performances
- Patent Title (中): 具有高λ和β性能的金属氧化物硅晶体管和半导体器件
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Application No.: US10780699Application Date: 2004-02-19
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Publication No.: US07262447B2Publication Date: 2007-08-28
- Inventor: Takaaki Negoro , Akira Shimizu
- Applicant: Takaaki Negoro , Akira Shimizu
- Applicant Address: JP Tokyo
- Assignee: Ricoh Company, Ltd.
- Current Assignee: Ricoh Company, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Dickstein Shapiro LLP
- Priority: JP2003-041196 20030219
- Main IPC: H01L29/80
- IPC: H01L29/80 ; H01L31/112
Abstract:
A semiconductor apparatus includes a MOS transistor having a semiconductor substrate providing as a channel region between a source and a drain. A gate electrode is formed on the semiconductor substrate via a gate oxide film. A threshold voltage of the source side region of the MOS transistor is higher than that of the drain side region in a longitudinal direction of the channel region so that a saturation drain current can be constant and a λ performance can be improved while suppressing channel width and length.
Public/Granted literature
- US20040183119A1 Metal oxide silicon transistor and semiconductor apparatus having high lambda and beta performances Public/Granted day:2004-09-23
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