发明授权
- 专利标题： Reduction of copper dewetting by transition metal deposition
- 专利标题（中）： 通过过渡金属沉积减少铜的去湿
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申请号： US11069514申请日： 2005-03-01
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公开(公告)号： US07265048B2公开(公告)日： 2007-09-04
- 发明人: Hua Chung , Seshadri Ganguli , Christophe Marcadal , Jick M. Yu
- 申请人： Hua Chung , Seshadri Ganguli , Christophe Marcadal , Jick M. Yu
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan LLP
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A method and apparatus for forming layers on a substrate comprising depositing a metal seed layer on a substrate surface having apertures, depositing a transition metal layer over the copper seed layer, and depositing a bulk metal layer over the transition metal layer. Also a method and apparatus for forming a via through a dielectric to reveal metal at the base of the via, depositing a transition metal layer, and depositing a first metal layer on the transition metal layer. Additionally, a method and apparatus for depositing a transition metal layer on an exposed metal surface, and depositing a layer thereover selected from the group consisting of a capping layer and a low dielectric constant layer.
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