发明授权
- 专利标题： Wafer-level transfer of membranes with gas-phase etching and wet etching methods
- 专利标题（中）： 用气相蚀刻和湿式蚀刻方法进行膜片转移
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申请号： US10678359申请日： 2003-10-02
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公开(公告)号： US07268081B2公开(公告)日： 2007-09-11
- 发明人: Eui-Hyeok Yang
- 申请人： Eui-Hyeok Yang
- 申请人地址： US CA Pasadena
- 专利权人： California Institute of Technology
- 当前专利权人： California Institute of Technology
- 当前专利权人地址： US CA Pasadena
- 代理机构： Fish & Richardson P.C.
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
Techniques for transferring a membrane from one wafer to another wafer to form integrated semiconductor devices. In one implementation, a carrier wafer is fabricated to include a membrane on one side of the carrier wafer. The membrane on the carrier wafer is then bond to a surface of a different, device wafer by a plurality of joints. Next, the carrier wafer is etched away by a dry etching chemical to expose the membrane and to leave said membrane on the device wafer. Transfer of membranes with a wet etching process is also described.
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