Invention Grant
- Patent Title: Wafer-level transfer of membranes with gas-phase etching and wet etching methods
- Patent Title (中): 用气相蚀刻和湿式蚀刻方法进行膜片转移
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Application No.: US10678359Application Date: 2003-10-02
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Publication No.: US07268081B2Publication Date: 2007-09-11
- Inventor: Eui-Hyeok Yang
- Applicant: Eui-Hyeok Yang
- Applicant Address: US CA Pasadena
- Assignee: California Institute of Technology
- Current Assignee: California Institute of Technology
- Current Assignee Address: US CA Pasadena
- Agency: Fish & Richardson P.C.
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
Techniques for transferring a membrane from one wafer to another wafer to form integrated semiconductor devices. In one implementation, a carrier wafer is fabricated to include a membrane on one side of the carrier wafer. The membrane on the carrier wafer is then bond to a surface of a different, device wafer by a plurality of joints. Next, the carrier wafer is etched away by a dry etching chemical to expose the membrane and to leave said membrane on the device wafer. Transfer of membranes with a wet etching process is also described.
Public/Granted literature
- US20040063322A1 Wafer-level transfer of membranes with gas-phase etching and wet etching methods Public/Granted day:2004-04-01
Information query
IPC分类:
