发明授权
- 专利标题： Field emission-type electron source and method of producing the same
- 专利标题（中）： 场致发射型电子源及其制造方法
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申请号： US10538738申请日： 2003-12-26
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公开(公告)号： US07268476B2公开(公告)日： 2007-09-11
- 发明人: Tsutomu Ichihara , Takuya Komoda , Koichi Aizawa , Yoshiaki Honda , Toru Baba
- 申请人： Tsutomu Ichihara , Takuya Komoda , Koichi Aizawa , Yoshiaki Honda , Toru Baba
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Works, Ltd.
- 当前专利权人： Matsushita Electric Works, Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Greenblum & Bernstein, P.L.C.
- 优先权： JP2002-381944 20021227
- 国际申请： PCT/JP03/16860 WO 20031226
- 国际公布： WO2004/061891 WO 20040722
- 主分类号： H01J9/02
- IPC分类号： H01J9/02
摘要：
A field emission-type electron source has a plurality of electron source elements (10a) formed on the side of one surface (front surface) of an insulative substrate (11) composed of a glass substrate. Each of electron source elements (10a) includes a lower electrode (12), a buffer layer (14) composed of an amorphous silicon layer formed on the lower electrode (12), a polycrystalline silicon layer (3) formed on the buffer layer (14), a strong-field drift layer (6) formed on the polycrystalline silicon layer (3), and a surface electrode (7) formed on the strong-field drift layer (6). The field emission-type electron source can achieved reduced in-plain variation in electron emission characteristics.
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