Invention Grant
- Patent Title: Static content addressable memory cell
- Patent Title (中): 静态内容可寻址存储单元
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Application No.: US11331889Application Date: 2006-01-12
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Publication No.: US07269040B2Publication Date: 2007-09-11
- Inventor: Shane Ching-Feng Hu
- Applicant: Shane Ching-Feng Hu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney, LLP
- Main IPC: G11C15/00
- IPC: G11C15/00

Abstract:
A static content addressable memory (CAM) cell. The CAM cell includes a latch having complementary data nodes capacitively coupled to ground, first and second access transistors, each coupled between a data node of the latch and a respective data line. The gates of each access transistor is coupled to a word line such that when activated, the respective data node and data line are coupled. The CAM cell further includes a match circuit coupled to one of the complementary data nodes of the latch. The match circuit discharges a match line in response to a data value stored at the data node to which the match circuit is coupled and compare data present on the respective data line mismatching. Two of the CAM cells can be used to implement a full ternary CAM cell.
Public/Granted literature
- US20060181911A1 Static content addressable memory cell Public/Granted day:2006-08-17
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