发明授权
- 专利标题： Local ESD protection for low-capacitance applications
- 专利标题（中）： 本地ESD保护用于低电容应用
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申请号： US10936912申请日： 2004-09-08
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公开(公告)号： US07277263B2公开(公告)日： 2007-10-02
- 发明人: Charvaka Duvvury , Gianluca Boselli
- 申请人： Charvaka Duvvury , Gianluca Boselli
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Rose Alyssa Keagy; W. James Brady; Frederick J. Telecky, Jr.
- 主分类号： H02H9/00
- IPC分类号： H02H9/00
摘要：
A semiconductor device for locally protecting an integrated circuit input/output (I/O) pad (301) against ESD events, when the I/O pad is located between a power pad (303) and a ground potential pad (305a). A first diode (311) and a second diode (312) are connected in series, the anode (311b) of the series connected to the I/O pad and the cathode (312a) connected to the power pad. A third diode (304) has its anode (304b) tied to the ground pad and its cathode (304a) tied to the I/O pad. A string (320) of at least one diode has its anode (321b) connected to the series between the first and second diode (node 313), isolated from the I/O pad, and its cathode (323a) connected to the ground pad. The string (320) may comprise three or more diodes.
公开/授权文献
- US20060050453A1 Local ESD protection for low-capacitance applications 公开/授权日：2006-03-09
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