Invention Grant
- Patent Title: Semiconductor laser
- Patent Title (中): 半导体激光器
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Application No.: US10642611Application Date: 2003-08-19
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Publication No.: US07277465B2Publication Date: 2007-10-02
- Inventor: Toshitaka Aoyagi , Satoshi Shirai
- Applicant: Toshitaka Aoyagi , Satoshi Shirai
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2002-273174 20020919
- Main IPC: H01S3/08
- IPC: H01S3/08

Abstract:
In a refractive index coupling distributed semiconductor laser having a Λ/2-phase-shift distributed feedback structure with a diffraction grating having a refractive index coupling property on an active layer, when viewed in a light distributed feedback direction, a value of (duty of a high refractive index portion)/(duty of a low refractive index portion) of a diffraction grating in a rear end face region is larger than that of a diffraction grating in a front end face region. In this manner, a coupling coefficient κ2 in a front end face region of a conventional semiconductor laser is smaller than a coupling coefficient κ1 in a rear end face region and is larger than 100 cm−1.
Public/Granted literature
- US20040057484A1 Semiconductor laser Public/Granted day:2004-03-25
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