发明授权
- 专利标题: DRAM for high-speed data access
- 专利标题(中): DRAM用于高速数据访问
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申请号: US10330482申请日: 2002-12-30
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公开(公告)号: US07277977B2公开(公告)日: 2007-10-02
- 发明人: Jeong-Hoon Kook , Sang-Hoon Hong , Se-Jun Kim
- 申请人: Jeong-Hoon Kook , Sang-Hoon Hong , Se-Jun Kim
- 申请人地址: KR Kyoungki-do
- 专利权人: Hynix Semiconductor Inc.
- 当前专利权人: Hynix Semiconductor Inc.
- 当前专利权人地址: KR Kyoungki-do
- 代理机构: Lowe Hauptman Ham & Berner LLP
- 优先权: KR10-2002-0042380 20020719
- 主分类号: G06F12/00
- IPC分类号: G06F12/00
摘要:
A DRAM with a general interleaving scheme for data input/output uses a normal bank structure. The DRAM provides a high-performance without consideration of a data access pattern. In order to implement the high-performance, the DRAM includes a plurality of normal banks, at least one cache bank, which has the same data access scheme with the normal banks, for selectively storing data with a normal bank selected at a read mode and a controller for controlling the access to the cache bank and the selected normal bank when continuous read commands are occurred to the selected normal bank.
公开/授权文献
- US20040015646A1 DRAM for high-speed data access 公开/授权日:2004-01-22
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