发明授权
- 专利标题: Method of forming a nitride-based semiconductor
- 专利标题(中): 形成氮化物基半导体的方法
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申请号: US11518174申请日: 2006-09-11
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公开(公告)号: US07279344B2公开(公告)日: 2007-10-09
- 发明人: Nobuhiko Hayashi , Tatsuya Kunisato , Hiroki Ohbo , Tsutomu Yamaguchi
- 申请人: Nobuhiko Hayashi , Tatsuya Kunisato , Hiroki Ohbo , Tsutomu Yamaguchi
- 申请人地址: JP Osaka
- 专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2001-56284 20010301
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L33/00
摘要:
A nitride-based semiconductor element having excellent element characteristics is obtained by forming a nitride-based semiconductor layer having excellent crystallinity without performing a long etching process. This nitride-based semiconductor element and the method thereof includes forming a mask layer having a recess portion on a substantially flat upper surface of an underlayer to partially expose the upper surface of the underlayer. A nitride-based semiconductor layer is laterally grown on the exposed part of the underlayer and the mask layer while forming a void on the recess portion of the mask layer. Thus, the strain of the laterally grown nitride-based semiconductor layer is so relaxed that the crystallinity of the nitride-based semiconductor layer is improved.