发明授权
- 专利标题: Alignment system and lithographic apparatus equipped with such an alignment system
- 专利标题(中): 对准系统和配备这种对准系统的光刻设备
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申请号: US10882683申请日: 2004-07-02
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公开(公告)号: US07283236B2公开(公告)日: 2007-10-16
- 发明人: Cristian Presura , Jan Evert Van Der Werf
- 申请人: Cristian Presura , Jan Evert Van Der Werf
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Pillsbury Winthrop Shaw Pittman LLP
- 主分类号: G01B11/00
- IPC分类号: G01B11/00 ; G03B27/42 ; G03B27/32 ; H01L23/544 ; H01L21/76 ; G03F9/00 ; G03C5/00
摘要:
A marker structure on a substrate includes line elements and trench elements, the line elements and trench elements each having a length in a first direction and being arranged in an alternating repetitive sequence in a second direction perpendicular to the first direction, the alternating repetitive sequence having a sequence length, the marker structure having at least one pitch value, the at least one pitch value being the sum of a line width of one line element and a trench width of one trench element. A width of the line elements varies over the sequence length of the marker structure between a minimum line width value and a maximum line width value, while a width of the trench elements likewise varies over the sequence length of the marker structure between a minimum trench width value and a maximum trench width value. A duty cycle of a pair of a line element and an adjacent trench element is substantially constant over the sequence length of the marker structure. Thus, the pitch value varies from a minimum pitch value to a maximum pitch value over the sequence length.
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