发明授权
- 专利标题： Method of manufacturing a SiC vertical MOSFET
- 专利标题（中）： 制造SiC垂直MOSFET的方法
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申请号： US11353992申请日： 2006-02-15
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公开(公告)号： US07285465B2公开(公告)日： 2007-10-23
- 发明人: Yoichiro Tarui , Ken-ichi Ohtsuka , Masayuki Imaizumi , Hiroshi Sugimoto , Tetsuya Takami
- 申请人： Yoichiro Tarui , Ken-ichi Ohtsuka , Masayuki Imaizumi , Hiroshi Sugimoto , Tetsuya Takami
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Leydig, Voit & Mayer, Ltd.
- 优先权： JP2003-090956 20030328; JP2004-017002 20040126
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A semiconductor device and its manufacturing method are provided in which the trade-off relation between channel resistance and JFET resistance, an obstacle to device miniaturization, is improved and the same mask is used to form a source region and a base region by ion implantation. In a vertical MOSFET that uses SiC, a source region and a base region are formed by ion implantation using the same tapered mask to give the base region a tapered shape. The taper angle of the tapered mask is set to 30° to 60° when the material of the tapered mask has the same range as SiC in ion implantation, and to 20° to 45° when the material of the tapered mask is SiO2.
公开/授权文献
- US20060134847A1 Method of manufacturing a SiC vertical MOSFET 公开/授权日：2006-06-22