发明授权
- 专利标题： Method of fabricating strained channel field effect transistor pair having underlapped dual liners
- 专利标题（中）： 制造具有双重衬垫的应变通道场效应晶体管对的方法
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申请号： US11492455申请日： 2006-07-25
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公开(公告)号： US07285488B2公开(公告)日： 2007-10-23
- 发明人: Haining S. Yang
- 申请人： Haining S. Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Daryl K. Neff, Esq.; H. Daniel Schnurmann
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L23/52
摘要：
A method is provided of forming contact vias. A dielectric region is formed to overlie substantially all of a transistor structure, the dielectric region having a substantially planar upper surface. A dielectric barrier layer is formed to overlie the upper surface of the dielectric region, the dielectric barrier layer being adapted to substantially prevent diffusion of one or more materials from above the dielectric barrier layer into the dielectric region. A first contact via is formed to extend through the dielectric barrier layer and the dielectric region to provide conductive communication with a conductive member of the transistor structure. A second contact via is formed to extend through the dielectric barrier layer and the dielectric region to provide conductive communication with one of a source region or a drain region of the transistor structure.
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