发明授权
- 专利标题： Semiconductor device and its manufacture method capable of preventing short circuit of electrodes when semiconductor device is mounted on sub-mount substrate
- 专利标题（中）： 半导体器件及其制造方法能够防止半导体器件安装在副安装基板上时的电极短路
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申请号： US10962109申请日： 2004-10-07
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公开(公告)号： US07285858B2公开(公告)日： 2007-10-23
- 发明人: Masahiko Tsuchiya , Naochika Horio
- 申请人： Masahiko Tsuchiya , Naochika Horio
- 申请人地址： JP Tokyo
- 专利权人： Stanley Electric Co., Ltd.
- 当前专利权人： Stanley Electric Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Frishauf, Holtz, Goodman & Chick, P.C.
- 优先权： JP2003-385645 20031114
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A confronting surface of a substrate faces a first surface of a semiconductor element. Extension layers are formed on the substrate at positions facing electrodes on the semiconductor element. A levee film is disposed on one of the confronting surface and the first surface. Openings are formed through the levee film. Connection members which is filled but is not completely filled in the openings connect the electrodes and the extension layers.
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