发明授权
US07286415B2 Semiconductor memory devices having a dual port mode and methods of operating the same
有权
具有双端口模式的半导体存储器件及其操作方法
- 专利标题: Semiconductor memory devices having a dual port mode and methods of operating the same
- 专利标题(中): 具有双端口模式的半导体存储器件及其操作方法
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申请号: US11258766申请日: 2005-10-26
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公开(公告)号: US07286415B2公开(公告)日: 2007-10-23
- 发明人: Kee-Won Kwon
- 申请人: Kee-Won Kwon
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec
- 优先权: KR10-2004-0091223 20041110
- 主分类号: G11C7/10
- IPC分类号: G11C7/10 ; G11C8/00
摘要:
A memory device having a dual port function includes a memory cell array and a switching unit. The memory cell array has a first port and a second port. The switching unit assigns first data received through a data bus to the first port in response to a leading edge of a clock signal and assigns second data received through the data bus to the second port in response to a trailing edge of the clock. Methods of operating memory devices having a dual port mode are also disclosed.
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